Atomistic Simulation of Gate Effect on Nanoscale Intrinsic Si Field-effect Transistors
نویسندگان
چکیده
X. F. WANG∗,†,§, L. N. ZHAO∗, Z. H. YAO∗, Z. F. HOU∗, M. YEE∗, X. ZHOU‡, S. H. LIN‡ and T. S. LEE‡ ∗Atomistix Asia Pacific Pte Ltd (AAP), Unit 106 16 Nanyang Drive, NTU, Singapore 637722, Singapore †School of Materials Science and Engineering, NTU Nanyang Avenue, Singapore 639798, Singapore ‡School of Electrical and Electronic Engineering, NTU Nanyang Avenue, Singapore 639798, Singapore §xf [email protected]
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